GaN-based semiconductor devices and materials

71 ta ish

1. The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

   M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

   MaqolaOAOchiq kirishSemiconductor Quantum Structures and DevicesPhysica B Condensed Matter20258 iqtibos

   ABIABI:AkademIndex/2025.article.000898

2. Changing the Voltage of the p-n Junction in a Magnetic Field

   G. Gulyamov, Feruza Mukhitdinova, Gulnoza Majidova

   MaqolaOAOchiq kirishSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology20233 iqtibos

   ABIABI:AkademIndex/2023.article.002083

3. Distribution of impurities in base-depleted region of diode temperature sensor

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

   MaqolaChalcogenide Semiconductor Thin FilmsLow Temperature Physics20243 iqtibos

   ABIABI:AkademIndex/2024.article.002075

4. The effect of a heated electron on the VAX of a tunnel diode

   G. Gulyamov, M. G. Dadamirzayev, K. M. Uktamova +1

   MaqolaGaN-based semiconductor devices and materialsAIP conference proceedings20232 iqtibos

   ABIABI:AkademIndex/2026.other.385121

5. The influence of heating on the characteristics of the electron-excited conduction in gallium phosphide films

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   MaqolaSemiconductor Quantum Structures and Devicesphysica status solidi (a)19831 iqtibos

   ABIABI:AkademIndex/1983.article.000076

6. Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates

   Tae Won Kang, Sh. U. Yuldashev, Igor L. Bolotin +5

   MaqolaGaN-based semiconductor devices and materialsJournal of Applied Physics20001 iqtibos

   ABIABI:AkademIndex/2000.article.000087

7. Electrical and Optical Properties of ZnO Films Grown on GaAs Substrates

   Sh. U. Yuldashev, Г. Н. Панин, Sungwoo Choi +7

   MaqolaOAOchiq kirishZnO doping and propertiesJapanese Journal of Applied Physics20031 iqtibos

   ABIABI:AkademIndex/2003.article.000083

8. Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices

   Karri Aswini, Chaitanya Kumar Kunapalli, K. Munirathnam +7

   MaqolaSemiconductor materials and interfacesPhysica B Condensed Matter20251 iqtibos

   ABIABI:AkademIndex/2025.article.001641

9. Controlling dislocation clusters in selective area growth of gallium nitride with hexagonal configurations of serpentine channel mask

   Muhammad Saddique Akbar Khan, Yu Guo, Pervaiz Ahmad +4

   MaqolaGaN-based semiconductor devices and materialsMicro and Nanostructures20251 iqtibos

   ABIABI:AkademIndex/2025.article.001719

10. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

    V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3

    MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19991 iqtibos

    ABIABI:AkademIndex/2026.other.522142

11. Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B

    Г. А. Александрова, И. В. Ивонин, L. G. Lavrent’eva +2

    MaqolaGaN-based semiconductor devices and materialsRussian Physics Journal19880 iqtibos

    ABIABI:AkademIndex/1988.article.000113

12. UHF generation in sub-micron layers of GaAs

    G. F. Karavaev, Е. А. Ткаченко, E. V. Uimanov

    MaqolaSemiconductor Quantum Structures and DevicesRussian Physics Journal19890 iqtibos

    ABIABI:AkademIndex/1989.article.000130

13. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

    V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7

    MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum19970 iqtibos

    ABIABI:AkademIndex/1997.article.000045

14. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

    М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

    MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19970 iqtibos

    ABIABI:AkademIndex/1997.article.000110

15. Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling

    А. В. Абрамов, A. G. Deryagin, N. G. Deryagin +5

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos

    ABIABI:AkademIndex/1997.article.000239

16. High-temperature diode formed by epitaxial GaP layers

    M. M. Sobolev, В. Г. Никитин

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000035

17. HVPE GaN and AIGaN 'Substrates' for Homoepitaxy

    Yu. Melnik, A. E. Nikolaev, С. И. Степанов +5

    MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

    ABIABI:AkademIndex/1998.article.000048

18. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

    A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh +7

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000107

19. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

    W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

    MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

    ABIABI:AkademIndex/1998.article.000109

20. On the epitaxy of aluminum nitride on silicon substrates in a chloride-hydride process

    A. N. Efimov, Andrew O. Lebedev, A. Tsaregorodtsev

    MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000132

21. Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

    V. V. Mamutin, В. Н. Жмерик, T. V. Shubina +5

    MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000162

22. Electrical and Optical Properties of Highly Strained GaN Epilayers

    A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8

    MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

    ABIABI:AkademIndex/1998.article.000191

23. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

    J. Holst, M. Straßburg, N. N. Ledentsov +13

    MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

    ABIABI:AkademIndex/1998.article.000219

24. Apparatus for growing GaN films on large-area substrates by the method of chloride-hydride vapor-phase epitaxy

    С. И. Степанов, D. Tsvetkov, A. E. Cherenkov

    MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000248

25. Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions

    Yu. V. Zhilyaev, M. E. Kompan, E. V. Konenkova +2

    MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000263