V. P. Ulin

2 ta ish

Fizika-Texnika Instituti

1. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

   V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19991 iqtibos

   ABIABI:AkademIndex/2026.other.522142

2. Unstrained epitaxial InxGa1−xAs films obtained on porous GaAs

   F. Yu. Soldatenkov, V. P. Ulin, A. A. Yakovenko +3

   MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/1999.article.000035