И. В. Ивонин

4 ta ish

Fizika-Texnika Instituti

1. Investigation of anisotropic effects in vapor epitaxy of indium arsenide. I. Anistropy of growth rate and surface microrelief

   Г. А. Александрова, И. В. Ивонин, L. M. Krasil'nikova +3

   MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/1980.article.000113

2. Influence of supersaturation on the growth of gallium arsenide films in chloride gas-transport systems

   L. G. Lavrent’eva, V. A. Moskovkin, И. В. Ивонин

   MaqolaOptical Coatings and GratingsRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/1981.article.000119

3. Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B

   Г. А. Александрова, И. В. Ивонин, L. G. Lavrent’eva +2

   MaqolaGaN-based semiconductor devices and materialsRussian Physics Journal19880 iqtibos

   ABIABI:AkademIndex/1988.article.000113

4. Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide

   И. В. Ивонин, N. N. Krivolapov, L. G. Lavrent’eva +1

   MaqolaSemiconductor materials and interfacesRussian Physics Journal19920 iqtibos

   ABIABI:AkademIndex/1992.article.000151