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Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide

И. В. ИвонинV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskN. N. KrivolapovV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskL. G. Lavrent’evaV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskL. P. PorokhovnichenkoV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk

Russian Physics Journaljournal1992en

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ABI

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Mavzular

Semiconductor materials and interfaces Chalcogenide Semiconductor Thin Films Semiconductor Quantum Structures and Devices

Identifikatorlar

DOI: 10.1007/bf01324985

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