Maqola

Investigation of anisotropic effects in vapor epitaxy of indium arsenide. I. Anistropy of growth rate and surface microrelief

Г. А. АлександроваV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskИ. В. ИвонинV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskL. M. Krasil'nikovaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskL. F. Lavrent'evaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskA. E. ShubinV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskM. P. YakubenyaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

Russian Physics Journaljournal1980en

Ochiq kirish: yoʻq

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Advanced Semiconductor Detectors and Materials Semiconductor Quantum Structures and Devices nanoparticles nucleation surface interactions

Identifikatorlar

DOI: 10.1007/bf00892532

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