L. F. Lavrent'eva

1 ta ish

Fizika-Texnika Instituti

1. Investigation of anisotropic effects in vapor epitaxy of indium arsenide. I. Anistropy of growth rate and surface microrelief

   Г. А. Александрова, И. В. Ивонин, L. M. Krasil'nikova +3

   MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/1980.article.000113