Maqola

Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B

Г. А. АлександроваV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskИ. В. ИвонинV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskL. G. Lavrent’evaV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskP. B. PashchenkoV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskM. V. ChekanovaV. D. Kuznetsov Siberian Physicotechnical Institute, State University, Tomsk

Russian Physics Journaljournal1988en

Ochiq kirish: yoʻq

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

GaN-based semiconductor devices and materials nanoparticles nucleation surface interactions

Identifikatorlar

DOI: 10.1007/bf00895989

Iqtiboslar va manbalar

0 ta iqtibos6 ta foydalanilgan manba