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AkademIndex

Xizmatlar

W. V. Lundin

7 ta ish

Fizika-Texnika Instituti

AkademScholarda batafsil koʻrsatkichlar

  1. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

    М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

    MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19970 iqtibos
    ABI

  2. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

    W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

    MaqolaOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos
    ABI

  3. Electrical and Optical Properties of Highly Strained GaN Epilayers

    A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8

    MaqolaOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos
    ABI

  4. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

    J. Holst, M. Straßburg, N. N. Ledentsov +13

    MaqolaOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos
    ABI

  5. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures

    A. V. Sakharov, W. V. Lundin, V. A. Semenov +4

    MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19990 iqtibos
    ABI

  6. Photoinduced self-organization of gallium nanowires on a GaN surface

    D. A. Bedarev, S. O. Kognovitskiĭ, W. V. Lundin

    MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19990 iqtibos
    ABI

  7. Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

    A. S. Usikov, V. V. Tret’yakov, W. V. Lundin +3

    MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19990 iqtibos
    ABI