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Xizmatlar

N. N. Ledentsov

15 ta ish

Russian Academy of Sciences

AkademScholarda batafsil koʻrsatkichlar

  1. Spontaneous Ordering of Arrays of Coherent Strained Islands

    V. A. Shchukin, N. N. Ledentsov, P. S. Kop’ev +1

    Maqola19955 iqtibos
    ABI

  2. Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing

    N. N. Ledentsov, Marius Grundmann, N. Kirstaedter +16

    Maqola19963 iqtibos
    ABI

  3. Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth

    N. N. Ledentsov, V. A. Shchukin, Marius Grundmann +17

    Maqola19962 iqtibos
    ABI

  4. Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures

    A. A. Sirenko, T. Ruf, N. N. Ledentsov +4

    Maqola19962 iqtibos
    ABI

  5. Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement

    A. V. Sakharov, S. V. Ivanov, S. V. Sorokin +4

    MaqolaStrong Light-Matter InteractionsTechnical Physics Letters19970 iqtibos
    ABI

  6. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

    Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos
    ABI

  7. Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy

    G. É. Cirlin, V. N. Petrov, S. A. Masalov +2

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos
    ABI

  8. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

    V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
    ABI

  9. Fabrication of InAs quantum dots on silicon

    G. É. Cirlin, V. N. Petrov, В. Г. Дубровский +6

    MaqolaSurface and Thin Film PhenomenaTechnical Physics Letters19980 iqtibos
    ABI

  10. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

    Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
    ABI

  11. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

    B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
    ABI

  12. Spontaneous long-wavelength interlevel emission in quantum-dot laser structures

    L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin +11

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
    ABI

  13. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

    J. Holst, M. Straßburg, N. N. Ledentsov +13

    MaqolaOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos
    ABI

  14. Excitonic waveguiding and lasing in wide bandgap semiconductor

    N. N. Ledentsov

    MaqolaSemiconductor Quantum Structures and DevicesPhysics of the Solid State19980 iqtibos
    ABI

  15. Spontaneous Interlevel Emission from Quantum Dot and Quantum Well Laser Structures

    L. E. Vorobjev, D. A. Firsov, V. A. Shalygin +11

    MaqolaOchiq kirishLaser-Matter Interactions and ApplicationsMaterials science forum19980 iqtibos
    ABI