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Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

V. M. UstinovPhysicotechnical InstituteA. R. KovshA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. E. ZhukovPhysicotechnical InstituteA. Yu. EgorovPhysicotechnical InstituteN. N. LedentsovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. V. LunevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. M. ShernyakovPhysicotechnical InstituteМ. В. МаксимовA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. F. Tsatsul’nikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgB. V. VolovikA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgP. S. Kop’evA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgZh. I. AlfërovPhysicotechnical Institute

Technical Physics Lettersjournal1998en

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ABI

Annotatsiya

The use of InAs quantum dots in an InGaAs matrix lattice-matched with an InP substrate can appreciably increase the emission wavelength of quantum-dot lasers. Lasing via quantum-dot states at the 1.84 μm wavelength (77 K) was obtained for the first time at a threshold current density of 64 A/cm2.

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Mavzular

Semiconductor Quantum Structures and Devices Semiconductor Lasers and Optical Devices Photonic and Optical Devices

Identifikatorlar

DOI: 10.1134/1.1261977

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