P. S. Kop’ev

17 ta ish

Russian Academy of Sciences

1. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions

   K. D. Moiseev, B. Ya. Meltser, В. А. Соловьев +4

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19981 iqtibos

   ABIABI:AkademIndex/1998.article.000055

2. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

   V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19991 iqtibos

   ABIABI:AkademIndex/2026.other.522142

3. New Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial Structures

   R. N. Kyutt, J. Heydenreich, S. Ruvimov +5

   MaqolaAdvanced ceramic materials synthesisDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19930 iqtibos

   ABIABI:AkademIndex/1993.article.000143

4. Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement

   A. V. Sakharov, S. V. Ivanov, S. V. Sorokin +4

   MaqolaStrong Light-Matter InteractionsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000056

5. Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

   I. L. Krestnikov, N. N. Ledentsov, М. В. Максимов +6

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000098

6. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

   М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000110

7. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

   Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000137

8. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

   V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000030

9. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

   Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000065

10. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

    A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh +7

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000107

11. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

    B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000117

12. Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

    V. V. Mamutin, В. Н. Жмерик, T. V. Shubina +5

    MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000162

13. Spontaneous long-wavelength interlevel emission in quantum-dot laser structures

    L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin +11

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000171

14. Spontaneous Interlevel Emission from Quantum Dot and Quantum Well Laser Structures

    L. E. Vorobjev, D. A. Firsov, V. A. Shalygin +11

    MaqolaOAOchiq kirishLaser-Matter Interactions and ApplicationsMaterials science forum19980 iqtibos

    ABIABI:AkademIndex/1998.article.000279

15. Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics

    L. Ya. Karachinskiĭ, A. M. Georgievskii, N. A. Pikhtin +3

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19990 iqtibos

    ABIABI:AkademIndex/1999.article.000189

16. Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition

    M. V. Muzafarova, Ivan V. Ilyin, E. N. Mokhov +7

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 iqtibos

    ABIABI:AkademIndex/2005.article.000301

17. Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with <sup>30</sup>Si Isotope: Electron Paramagnetic Resonance Study

    Ivan V. Ilyin, M. V. Muzafarova, P. G. Baranov +6

    MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 iqtibos

    ABIABI:AkademIndex/2007.article.000209