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AkademIndex

Xizmatlar

В. А. Соловьев

8 ta ish

Fizika-Texnika Instituti

AkademScholarda batafsil koʻrsatkichlar

  1. Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

    A. А. Lebedev, Anatoly M. Strel’chuk, Denis Davydov +5

    Maqola20013 iqtibos
    ABI

  2. Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

    N.S. Savkina, A. S. Tregubova, M. P. Scheglov +3

    Maqola20022 iqtibos
    ABI

  3. Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

    S. V. Ivanov, M. Yu. Chernov, В. А. Соловьев +3

    Maqola20182 iqtibos
    ABI

  4. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions

    K. D. Moiseev, B. Ya. Meltser, В. А. Соловьев +4

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19981 iqtibos
    ABI

  5. Heteroepitaxy of GaAs on Porous Silicon: The Structure of the Interface

    T. Kovyazina, A. A. Kutas, V.I. Khitko +5

    MaqolaSilicon Nanostructures and PhotoluminescenceMaterials science forum19930 iqtibos
    ABI

  6. New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers

    В. А. Соловьев, M. P. Mikhaĭlova, M. V. Stepanov +2

    MaqolaSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 iqtibos
    ABI

  7. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

    W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

    MaqolaOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos
    ABI

  8. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

    Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos
    ABI