Denis Davydov

3 ta ish

Russian Academy of Sciences

1. Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

   A. А. Lebedev, Anatoly M. Strel’chuk, Denis Davydov +5

   Maqola20013 iqtibos

   ABIABI:AkademIndex/2026.other.413673

2. Radiation Hardness of Silicon Carbide

   A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/2003.article.000098

3. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

   Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/2003.article.000282