N. B. Strokan

10 ta ish

Russian Academy of Sciences

1. Carrier transport in a diode base with locally nonuniform recombination properties

   А. В. Иванов, N. B. Strokan, V. B. Shuman

   MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters19971 iqtibos

   ABIABI:AkademIndex/1997.article.000150

2. High Energy Resolution Detectors Based on 4H-SiC

   Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5

   MaqolaParticle Detector Development and PerformanceMaterials science forum20051 iqtibos

   ABIABI:AkademIndex/2005.article.000096

3. Determination of the uniformity of the carrier lifetime in a material from the profile of the amplitude spectrum of an ion detector

   N. B. Strokan

   MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000161

4. Behavior of epitaxial GaAs layers as α particle detectors

   V. M. Botnaryuk, Yu. V. Zhilyaev, А. М. Иванов +2

   MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000192

5. On the generation of radiation defects by accelerated ions in silicon

   А. В. Иванов, N. B. Strokan

   MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000274

6. Radiation Hardness of Silicon Carbide

   A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/2003.article.000098

7. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

   Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/2003.article.000282

8. Radiation Hard Devices Based on SiC

   Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 iqtibos

   ABIABI:AkademIndex/2006.article.000250

9. 4H-SiC High Temperature Spectrometers

   Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 iqtibos

   ABIABI:AkademIndex/2007.article.000197

10. 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

    Alexander M. Ivanov, Evgenia V. Kalinina, N. B. Strokan +1

    MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 iqtibos

    ABIABI:AkademIndex/2009.article.000194