А. В. Иванов

2 ta ish

Fizika-Texnika Instituti

1. Carrier transport in a diode base with locally nonuniform recombination properties

   А. В. Иванов, N. B. Strokan, V. B. Shuman

   MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters19971 iqtibos

   ABIABI:AkademIndex/1997.article.000150

2. On the generation of radiation defects by accelerated ions in silicon

   А. В. Иванов, N. B. Strokan

   MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000274