Evgenia V. Kalinina

18 ta ish

Russian Academy of Sciences

1. Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method

   N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +1

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 iqtibos

   ABIABI:AkademIndex/2002.article.000200

2. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

   Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesMaterials science forum20052 iqtibos

   ABIABI:AkademIndex/2026.other.381994

3. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

   Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 iqtibos

   ABIABI:AkademIndex/2026.other.603414

4. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

   Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 iqtibos

   ABIABI:AkademIndex/2003.article.000128

5. High Energy Resolution Detectors Based on 4H-SiC

   Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5

   MaqolaParticle Detector Development and PerformanceMaterials science forum20051 iqtibos

   ABIABI:AkademIndex/2005.article.000096

6. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

   V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7

   MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum19970 iqtibos

   ABIABI:AkademIndex/1997.article.000045

7. Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

   Evgenia V. Kalinina, A. S. Zubrilov, N.I. Kuznetsov +4

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/2000.article.000091

8. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

   Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/2000.article.000171

9. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/2003.article.000141

10. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 iqtibos

    ABIABI:AkademIndex/2004.article.000109

11. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

    MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 iqtibos

    ABIABI:AkademIndex/2005.article.000233

12. Radiation Hard Devices Based on SiC

    Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3

    MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 iqtibos

    ABIABI:AkademIndex/2006.article.000250

13. Investigation of 4H-SiC Layers Implanted by Al Ions

    E. Kolesnikova, Evgenia V. Kalinina, A. А. Ситникова +2

    MaqolaSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20070 iqtibos

    ABIABI:AkademIndex/2007.article.000171

14. 4H-SiC High Temperature Spectrometers

    Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

    MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 iqtibos

    ABIABI:AkademIndex/2007.article.000197

15. 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

    Alexander M. Ivanov, Evgenia V. Kalinina, N. B. Strokan +1

    MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 iqtibos

    ABIABI:AkademIndex/2009.article.000194

16. Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

    Evgenia V. Kalinina, M. V. Zamoryanskaya, E. Kolesnikova +1

    MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 iqtibos

    ABIABI:AkademIndex/2009.article.000223

17. Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi

    D.B. Shustov, E. Kolesnikova, Evgenia V. Kalinina +2

    MaqolaSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20090 iqtibos

    ABIABI:AkademIndex/2009.article.000273

18. Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

    Anatoly M. Strel’chuk, Evgenia V. Kalinina, A. А. Lebedev

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20130 iqtibos

    ABIABI:AkademIndex/2013.article.000107