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AkademIndex

Xizmatlar

N.I. Kuznetsov

13 ta ish

Fizika-Texnika Instituti

AkademScholarda batafsil koʻrsatkichlar

  1. Effect of deep levels on current excitation in 6H-SiC diodes

    N.I. Kuznetsov, J. A. Edmond

    Maqola19973 iqtibos
    ABI

  2. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

    N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20002 iqtibos
    ABI

  3. Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method

    N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +1

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 iqtibos
    ABI

  4. Modern principles of anti-viral therapy of hepatitis C

    N.I. Kuznetsov, E. S. Romanova, Galina Yu. Startseva

    Maqola20182 iqtibos
    ABI

  5. Optically Transparent 6H-Silicon Carbide

    A. Bakin, Sergey I. Dorozhkin, A. S. Zubrilov +2

    MaqolaOchiq kirishThin-Film Transistor TechnologiesMaterials science forum19980 iqtibos
    ABI

  6. Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

    Evgenia V. Kalinina, A. S. Zubrilov, N.I. Kuznetsov +4

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos
    ABI

  7. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

    Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos
    ABI

  8. Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions

    N.I. Kuznetsov, A. E. Nikolaev, Yu. Melnik +1

    MaqolaOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum20000 iqtibos
    ABI

  9. Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode

    Roumen Kakanakov, Liliana Kassamakova, N. Hristeva +3

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 iqtibos
    ABI

  10. Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability

    L. Kassamakova-Kolaklieva, Roumen Kakanakov, V. Cimalla +4

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  11. Reliability of 4H-SiC p-n Diodes on LPE Grown Layers

    G. Sarov, Roumen Kakanakov, T. Cholakova +6

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  12. Porous SiC: New Applications through In- and Out- Dopant Diffusion

    M. G. Mynbaeva, N.I. Kuznetsov, A. A. Lavrent’ev +7

    MaqolaOchiq kirishSemiconductor materials and devicesMaterials science forum20030 iqtibos
    ABI

  13. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications

    N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +6

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI