M. G. Mynbaeva

4 ta ish

Russian Academy of Sciences

1. High-temperature diffusion doping of porous silicon carbide

   M. G. Mynbaeva, E. N. Mokhov, A. A. Lavrent’ev +1

   Maqola20082 iqtibos

   ABIABI:AkademIndex/2026.other.498870

2. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/2000.article.000163

3. Porous SiC: New Applications through In- and Out- Dopant Diffusion

   M. G. Mynbaeva, N.I. Kuznetsov, A. A. Lavrent’ev +7

   MaqolaOAOchiq kirishSemiconductor materials and devicesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/2003.article.000245

4. On Current Limitations in Porous SiC Applications

   M. G. Mynbaeva, A. A. Lavrent’ev, I. S. Kotousova +3

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceMaterials science forum20050 iqtibos

   ABIABI:AkademIndex/2005.article.000114