E. N. Mokhov

7 ta ish

Russian Academy of Sciences

1. Vacancy defects in silicon carbide

   O. Girka, E. N. Mokhov

   Maqola19953 iqtibos

   ABIABI:AkademIndex/2026.other.498883

2. High-temperature diffusion doping of porous silicon carbide

   M. G. Mynbaeva, E. N. Mokhov, A. A. Lavrent’ev +1

   Maqola20082 iqtibos

   ABIABI:AkademIndex/2026.other.498870

3. Electron paramagnetic resonance of deep boron acceptors in 4H-SiC and 3C-SiC crystals

   P. G. Baranov, I. V. Il’in, E. N. Mokhov

   Maqola19982 iqtibos

   ABIABI:AkademIndex/2026.other.529584

4. Micropipe evolution in silicon carbide

   M. Yu. Gutkin, A. G. Sheĭnerman, T. S. Argunova +5

   Maqola20032 iqtibos

   ABIABI:AkademIndex/2026.other.611744

5. Structural Transformation of Dislocated Micropipes in Silicon Carbide

   M. Yu. Gutkin, A. G. Sheĭnerman, T. S. Argunova +4

   MaqolaOAOchiq kirishAdvanced Surface Polishing TechniquesMaterials science forum20040 iqtibos

   ABIABI:AkademIndex/2004.article.000208

6. Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition

   M. V. Muzafarova, Ivan V. Ilyin, E. N. Mokhov +7

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 iqtibos

   ABIABI:AkademIndex/2005.article.000301

7. Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with <sup>30</sup>Si Isotope: Electron Paramagnetic Resonance Study

   Ivan V. Ilyin, M. V. Muzafarova, P. G. Baranov +6

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 iqtibos

   ABIABI:AkademIndex/2007.article.000209