N.S. Savkina

12 ta ish

Russian Academy of Sciences

1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

   A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 iqtibos

   ABIABI:AkademIndex/2003.article.000117

2. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

   Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 iqtibos

   ABIABI:AkademIndex/2026.other.381992

3. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

   A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

   MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 iqtibos

   ABIABI:AkademIndex/2000.article.000005

4. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

   N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 iqtibos

   ABIABI:AkademIndex/2003.article.000136

5. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

   Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 iqtibos

   ABIABI:AkademIndex/2004.article.000056

6. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

   Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20071 iqtibos

   ABIABI:AkademIndex/2026.other.381998

7. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

   A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/2000.article.000093

8. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/2000.article.000163

9. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

   A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 iqtibos

   ABIABI:AkademIndex/2002.article.000201

10. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

    Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4

    MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

    ABIABI:AkademIndex/2003.article.000282

11. X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

    T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5

    MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 iqtibos

    ABIABI:AkademIndex/2004.article.000164

12. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

    A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 iqtibos

    ABIABI:AkademIndex/2004.article.000211