Alexey N. Kuznetsov

9 ta ish

Russian Academy of Sciences

1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

   A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 iqtibos

   ABIABI:AkademIndex/2003.article.000117

2. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

   Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 iqtibos

   ABIABI:AkademIndex/2026.other.381992

3. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

   Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 iqtibos

   ABIABI:AkademIndex/2004.article.000056

4. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

   Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20071 iqtibos

   ABIABI:AkademIndex/2026.other.381998

5. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

   A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/2000.article.000093

6. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

   A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 iqtibos

   ABIABI:AkademIndex/2002.article.000201

7. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

   A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 iqtibos

   ABIABI:AkademIndex/2004.article.000211

8. 6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

   Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6

   MaqolaSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 iqtibos

   ABIABI:AkademIndex/2005.article.000230

9. Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

   A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6

   MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum20060 iqtibos

   ABIABI:AkademIndex/2006.article.000281