A. E. Cherenkov

4 ta ish

Fizika-Texnika Instituti

1. Apparatus for growing GaN films on large-area substrates by the method of chloride-hydride vapor-phase epitaxy

   С. И. Степанов, D. Tsvetkov, A. E. Cherenkov

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000248

2. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/2000.article.000163

3. 6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

   Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6

   MaqolaSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 iqtibos

   ABIABI:AkademIndex/2005.article.000230

4. Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

   A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6

   MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum20060 iqtibos

   ABIABI:AkademIndex/2006.article.000281