С. И. Степанов

4 ta ish

Argonne National Laboratory

1. Photorefractive Crystals in Coherent Optical Systems

   М. П. Петров, С. И. Степанов, А. В. Хоменко

   Kitob19912 iqtibos

   ABIABI:AkademIndex/2026.other.666217

2. HVPE GaN and AIGaN 'Substrates' for Homoepitaxy

   Yu. Melnik, A. E. Nikolaev, С. И. Степанов +5

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

   ABIABI:AkademIndex/1998.article.000048

3. Apparatus for growing GaN films on large-area substrates by the method of chloride-hydride vapor-phase epitaxy

   С. И. Степанов, D. Tsvetkov, A. E. Cherenkov

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000248

4. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/2000.article.000163