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AkademIndex

Xizmatlar

Anatoly M. Strel’chuk

34 ta ish

Fizika-Texnika Instituti

AkademScholarda batafsil koʻrsatkichlar

  1. Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

    N.S. Savkina, A. А. Lebedev, D. V. Davydov +13

    Maqola20004 iqtibos
    ABI

  2. High-dose Al-implanted 4H-SiC p+-n-n+ junctions

    E. V. Kalinina, G. Kholujanov, В. Н. Соловьев +11

    Maqola20004 iqtibos
    ABI

  3. Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers

    E. V. Kalinina, G. Kholuyanov, D. V. Davydov +5

    Maqola20033 iqtibos
    ABI

  4. Influence of proton irradiation on recombination current in 6H–SiC pn structures

    Anatoly M. Strel’chuk, V. V. Kozlovski, N.S. Savkina +2

    Maqola19993 iqtibos
    ABI

  5. Ideal 4H-SiC pn junction and its characteristic shunt

    Anatoly M. Strel’chuk, N.S. Savkina

    Maqola20013 iqtibos
    ABI

  6. Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC

    Anatoly M. Strel’chuk, N.S. Savkina, Alexey N. Kuznetsov +2

    Maqola20023 iqtibos
    ABI

  7. Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

    A. А. Lebedev, Anatoly M. Strel’chuk, Denis Davydov +5

    Maqola20013 iqtibos
    ABI

  8. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

    A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 iqtibos
    ABI

  9. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

    Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 iqtibos
    ABI

  10. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

    Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesMaterials science forum20052 iqtibos
    ABI

  11. A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum

    E. V. Kalinina, V. Kossov, R. R. Yafaev +2

    Maqola20102 iqtibos
    ABI

  12. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

    Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 iqtibos
    ABI

  13. Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions

    E. V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

    Maqola20042 iqtibos
    ABI

  14. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

    A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

    MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 iqtibos
    ABI

  15. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

    N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 iqtibos
    ABI

  16. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

    Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 iqtibos
    ABI

  17. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

    Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20071 iqtibos
    ABI

  18. Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres

    M. M. Anikin, A. А. Lebedev, Anatoly M. Strel’chuk

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesDefect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum19930 iqtibos
    ABI

  19. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

    A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos
    ABI

  20. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

    A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 iqtibos
    ABI

  21. Radiation Hardness of Silicon Carbide

    A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  22. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  23. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

    Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  24. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 iqtibos
    ABI

  25. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

    A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 iqtibos
    ABI