Asosiy kontentga oʻtish
AkademIndex

Xizmatlar

Vitalii V. Kozlovski

17 ta ish

Peter the Great St. Petersburg Polytechnic University

AkademScholarda batafsil koʻrsatkichlar

  1. Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

    В. А. Козлов, Vitalii V. Kozlovski

    Maqola20018 iqtibos
    ABI

  2. Positron Probing of Vacancy Volume of Thermally Stable Deep Donors Produced with 15 MeV Protons in <i>n</i>-FZ-Si:P Crystals

    N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +4

    Maqola20132 iqtibos
    ABI

  3. Positron Lifetime at Deep Donors of Radiation Origin in Proton - Irradiated FZ-Silicon Single Crystals

    N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +3

    Maqola20122 iqtibos
    ABI

  4. Positron annihilation on defects in silicon irradiated with 15 MeV protons

    N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +3

    MaqolaMuon and positron interactions and applicationsJournal of Physics Condensed Matter20121 iqtibos
    ABI

  5. Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

    N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4

    MaqolaMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20171 iqtibos
    ABI

  6. Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy

    Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +3

    MaqolaMuon and positron interactions and applicationsActa Materialia20141 iqtibos
    ABI

  7. Cascade phonon-assisted trapping of positrons by divacancies in n-FZ-Si(P) single crystals irradiated with 15 MeV protons

    N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +4

    proceeding20141 iqtibos
    ABI

  8. Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

    N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +4

    MaqolaOchiq kirishMuon and positron interactions and applicationsJournal of Physics Conference Series20151 iqtibos
    ABI

  9. Positron probing of disordered regions in neutron‐irradiated silicon

    N.Yu. Arutyunov, Nick S. Bennett, Neil M. Wight +4

    MaqolaMuon and positron interactions and applicationsphysica status solidi (b)20161 iqtibos
    ABI

  10. The influence of secondary radiation defects on the redistribution of impurity ions due to high temperature proton irradiation

    Vitalii V. Kozlovski, V. N. Lomasov, L. S. Vlasenko

    Maqola19880 iqtibos
    ABI

  11. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

    V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7

    MaqolaOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum19970 iqtibos
    ABI

  12. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

    A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos
    ABI

  13. Radiation Hardness of Silicon Carbide

    A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  14. Modification of the Silicon Carbide by Proton Irradiation

    Е. В. Богданова, Vitalii V. Kozlovski, D. S. Rumyantsev +2

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesMaterials science forum20040 iqtibos
    ABI

  15. Influence of Irradiation on Excess Currents in SiC pn Structures

    Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 iqtibos
    ABI

  16. Formation and annealing of vacancy-P complexes in proton-irradiated germanium

    Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +2

    MaqolaMuon and positron interactions and applicationsActa Materialia20150 iqtibos
    ABI

  17. Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n<sup>+</sup>p 4H-SiC Structures

    Anatoly M. Strel’chuk, A. E. Kalyadin, A. А. Lebedev +3

    MaqolaOchiq kirishSemiconductor materials and devicesMaterials science forum20180 iqtibos
    ABI