Е. В. Богданова

3 ta ish

Russian Academy of Sciences

1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

   A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 iqtibos

   ABIABI:AkademIndex/2003.article.000117

2. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

   A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/2000.article.000093

3. Modification of the Silicon Carbide by Proton Irradiation

   Е. В. Богданова, Vitalii V. Kozlovski, D. S. Rumyantsev +2

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesMaterials science forum20040 iqtibos

   ABIABI:AkademIndex/2004.article.000214