D. V. Davydov

8 ta ish

Russian Academy of Sciences

1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

   A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 iqtibos

   ABIABI:AkademIndex/2003.article.000117

2. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

   A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

   MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 iqtibos

   ABIABI:AkademIndex/2000.article.000005

3. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

   Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 iqtibos

   ABIABI:AkademIndex/2004.article.000056

4. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

   A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/2000.article.000093

5. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

   A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 iqtibos

   ABIABI:AkademIndex/2002.article.000201

6. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/2003.article.000141

7. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

   Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 iqtibos

   ABIABI:AkademIndex/2004.article.000109

8. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 iqtibos

   ABIABI:AkademIndex/2005.article.000233