Grigory Onushkin

4 ta ish

Ioffe Institute

1. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

   Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 iqtibos

   ABIABI:AkademIndex/2026.other.603414

2. High Energy Resolution Detectors Based on 4H-SiC

   Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5

   MaqolaParticle Detector Development and PerformanceMaterials science forum20051 iqtibos

   ABIABI:AkademIndex/2005.article.000096

3. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/2003.article.000141

4. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 iqtibos

   ABIABI:AkademIndex/2005.article.000233