A. А. Lebedev

31 ta ish

Russian Academy of Sciences

AkademScholarda batafsil koʻrsatkichlar

Deep level centers in silicon carbide: A review
A. А. Lebedev
Sharh maqola19999 iqtibos
ABI
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
N.S. Savkina, A. А. Lebedev, D. V. Davydov +13
Maqola20004 iqtibos
ABI
Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates
A. А. Lebedev, Anatoly M. Strel’chuk, Denis Davydov +5
Maqola20013 iqtibos
ABI
Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region
A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4
MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 iqtibos
ABI
High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2
MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 iqtibos
ABI
Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation
N.S. Savkina, A. S. Tregubova, M. P. Scheglov +3
Maqola20022 iqtibos
ABI
Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam
A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3
MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 iqtibos
ABI
Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4
MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 iqtibos
ABI
Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8
MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 iqtibos
ABI
Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure
Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1
MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20071 iqtibos
ABI
Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres
M. M. Anikin, A. А. Lebedev, Anatoly M. Strel’chuk
MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesDefect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum19930 iqtibos
ABI
Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation
A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4
MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos
ABI
Growth of SiC and GaN on Porous Buffer Layers
M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12
MaqolaGaN-based semiconductor devices and materialsMaterials science forum20000 iqtibos
ABI
p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization
A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5
MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 iqtibos
ABI
Radiation Hardness of Silicon Carbide
A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4
MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
ABI
p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation
Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4
MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
ABI
X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface
T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5
MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 iqtibos
ABI
Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1
MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 iqtibos
ABI
Modification of the Silicon Carbide by Proton Irradiation
Е. В. Богданова, Vitalii V. Kozlovski, D. S. Rumyantsev +2
MaqolaOchiq kirishSilicon and Solar Cell TechnologiesMaterials science forum20040 iqtibos
ABI
On Current Limitations in Porous SiC Applications
M. G. Mynbaeva, A. A. Lavrent’ev, I. S. Kotousova +3
MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceMaterials science forum20050 iqtibos
ABI
Influence of Irradiation on Excess Currents in SiC pn Structures
Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1
MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 iqtibos
ABI
6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy
Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6
MaqolaSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 iqtibos
ABI
About the Nature of Recombination Current in 4H-SiC pn Structures
Anatoly M. Strel’chuk, A.V. Mashichev, A. А. Lebedev +2
MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 iqtibos
ABI
Radiation Hard Devices Based on SiC
Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3
MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 iqtibos
ABI
Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures
A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6
MaqolaOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum20060 iqtibos
ABI

A. А. Lebedev

Deep level centers in silicon carbide: A review

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres

Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

Growth of SiC and GaN on Porous Buffer Layers

p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

Radiation Hardness of Silicon Carbide

p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

Modification of the Silicon Carbide by Proton Irradiation

On Current Limitations in Porous SiC Applications

Influence of Irradiation on Excess Currents in SiC pn Structures

6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

About the Nature of Recombination Current in 4H-SiC pn Structures

Radiation Hard Devices Based on SiC

Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures