Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres
M. M. AnikinA. А. LebedevRussian Academy of SciencesAnatoly M. Strel’chukA.F. Ioffe Physicotechnical Institute RAS
Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forumjournal1993en
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