L. M. Sorokin

7 ta ish

Oʻzbekiston Respublikasi Fanlar Akademiyasi

1. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

   N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 iqtibos

   ABIABI:AkademIndex/2003.article.000136

2. X-Ray Diffractometry and Topography of CdHgTe Bulk Crystals and CdHgTe-CdTe Epitaxial Structures

   В. В. Ратников, T. S. Argunova, K.E. Mironov +1

   MaqolaAdvanced Semiconductor Detectors and MaterialsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19910 iqtibos

   ABIABI:AkademIndex/1991.article.000118

3. New Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial Structures

   R. N. Kyutt, J. Heydenreich, S. Ruvimov +5

   MaqolaAdvanced ceramic materials synthesisDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19930 iqtibos

   ABIABI:AkademIndex/1993.article.000143

4. Three-dimensional lattice of parallel-oriented tellurium nanoclusters in an opal matrix

   V. N. Bogomolov, L. M. Sorokin

   MaqolaMineralogy and Gemology StudiesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000256

5. X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

   T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 iqtibos

   ABIABI:AkademIndex/2004.article.000164

6. 6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

   Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6

   MaqolaSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 iqtibos

   ABIABI:AkademIndex/2005.article.000230

7. Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding

   I. V. Grekhov, E. I. Belyakova, L. S. Kostina +7

   MaqolaSemiconductor materials and interfacesTechnical Physics Letters20080 iqtibos

   ABIABI:AkademIndex/2008.article.000211