I. S. Kotousova

2 ta ish

1. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/2000.article.000163

2. On Current Limitations in Porous SiC Applications

   M. G. Mynbaeva, A. A. Lavrent’ev, I. S. Kotousova +3

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceMaterials science forum20050 iqtibos

   ABIABI:AkademIndex/2005.article.000114