N.Yu. Arutyunov
30 ta ish
Oʻzbekiston Respublikasi Fanlar Akademiyasi
Positron Sudies of Thermal-Induced Defects in Silicon
N.Yu. Arutyunov, V.Yu. Traschakov
Maqola19892 iqtibosABIConfiguration of DV Complexes In Ge: Positron Probing of Ion Cores
N.Yu. Arutyunov, V. V. Emtsev, E.M. Sayed +1
Maqola20072 iqtibosABIPositron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons
N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4
MaqolaMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20171 iqtibosABI1D-ACAR Studies of As-Grown Impurity Centers in Silicon
N.Yu. Arutyunov, V. Yu. Trashchakov
Maqola20011 iqtibosABIPositron annihilation lifetime in float‐zone n‐type silicon irradiated by fast electrons: a thermally stable vacancy defect
N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +3
MaqolaMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20161 iqtibosABI