A Study of Defects in Heat Treated Cz-Silicon by Positron Annihilation
N.Yu. ArutyunovInstitute for Electronics, Academy of Sciences of the Uzbek SSR, TashkentV. V. EmtsevA. F. Ioffe Physical-Technical Institute, Academy of Sciences of the USSR, LeningradK. SchmalzInstitute of Semiconductor Physics, Academy of Sciences, Frankfurt (Oder)V. Yu. TrashchakovInstitute for Electronics, Academy of Sciences of the Uzbek SSR, Tashkent
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