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Xizmatlar

Б.Г. Атабаев

24 ta ish

Oʻzbekiston Respublikasi Fanlar Akademiyasi

AkademScholarda batafsil koʻrsatkichlar

  1. Procedure for determining defects in sputtered clusters of ionic crystals

    Utkirjon Sharopov, Б.Г. Атабаев, R. Djabbarganov +2

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201614 iqtibos
    ABI

  2. Energy Threshold of the Atomic and Cluster Sputtering of Some Elements under Bombardment with Cs, Rb, and Na Ions

    R. Djabbarganov, Б.Г. Атабаев, З. А. Исаханов +1

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201914 iqtibos
    ABI

  3. Kinetics of aggregations of F 2, F 3, X, and colloid centers in LiF/Si(111) films upon low-temperature annealing

    Utkirjon Sharopov, Б.Г. Атабаев, R. Djabberganov +1

    MaqolaElectron and X-Ray Spectroscopy TechniquesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201311 iqtibos
    ABI

  4. Defect Formation on the Surface of ZnO Using Low-Energy Electrons

    Utkirjon Sharopov, Б.Г. Атабаев, R. Djabbarganov

    MaqolaZnO doping and propertiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202011 iqtibos
    ABI

  5. Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

    I. G. Atabaev, C. C. Tin, Б.Г. Атабаев +12

    Maqola20088 iqtibos
    ABI

  6. Mechanism of Aggregation Colloid Centers on Surface Ionic Crystals

    Utkirjon Sharopov, Б.Г. Атабаев, R. Djabbarganov +1

    BobOchiq kirish20166 iqtibos
    ABI

  7. Target current spectroscopy of the alkali halides KCl, CsCl and KBr

    E.K. Alidjanov, Б.Г. Атабаев, S. Gaipov +1

    MaqolaElectron and X-Ray Spectroscopy TechniquesThin Solid Films19946 iqtibos
    ABI

  8. Neutral and negative ion cluster emission during sputtering

    M.K. Abdullaeva, Б.Г. Атабаев, R. Dzabbarganov

    Maqola19915 iqtibos
    ABI

  9. Oxide film assisted dopant diffusion in silicon carbide

    Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

    MaqolaSilicon and Solar Cell TechnologiesThin Solid Films20105 iqtibos
    ABI

  10. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 iqtibos
    ABI

  11. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 iqtibos
    ABI

  12. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

    I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20114 iqtibos
    ABI

  13. Энергетическая и температурная зависимость вторичной ионной эмиссии кластеров GaN/SiC при бомбардировке ионами цезия

    Б.Г. Атабаев, Р. Джаббарганов, М. Х. Ахмаджонова +1

    Maqola20213 iqtibos
    ABI

  14. Rapid 3D Defect Mapping in SiC Betavoltaics via Positron Annihilation Tomograph

    Б.Г. Атабаев, V. I. Chepurnov, N.Yu. Arutyunov +3

    MaqolaAdvanced Energy Technologies and Civil Engineering Innovationsphysica status solidi (RRL) - Rapid Research Letters20252 iqtibos
    ABI

  15. Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals

    Б.Г. Атабаев, Kh. N. Juraev, Z. Sh. Shaymardanov +2

    MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Applied Spectroscopy20252 iqtibos
    ABI

  16. The emission of atomic and molecular ions under single and multiple-charged rare gas ion bombardment of LiF, KCl, SiC

    Б.Г. Атабаев, Sh.S. Radjabov, M.Kh. Akhmadzhanova

    MaqolaIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms19951 iqtibos
    ABI

  17. Investigation of the electronic structure reconstruction during various stages of iron oxidation by target current and Auger spectroscopy

    E.K. Alidjanov, Б.Г. Атабаев, K.Yu. Prokhozev +1

    MaqolaHydrogen embrittlement and corrosion behaviors in metalsJournal of Electron Spectroscopy and Related Phenomena19940 iqtibos
    ABI

  18. Potential sputtering of LiF and SiC under bombardment by Ar q+ (q = 1-6) multicharged ions

    Б.Г. Атабаев

    MaqolaIon-surface interactions and analysis20050 iqtibos
    ABI

  19. The Influence of the Atomic Oxygen Plasma on the Surface and on the Photoelectric Properties of Solar Arrays

    Б.Г. Атабаев, L.F. Lifanova, F. Rakhimova +2

    Bobsolar cell performance optimizationKluwer Academic Publishers eBooks20060 iqtibos
    ABI

  20. Energy and Temperature Dependence of the Secondary Ion Emission of GaN/SiC Clusters under Cesium-Ion Bombardment

    Б.Г. Атабаев, R. Djabbarganov, M. Kh. Akhmadjanova +1

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20210 iqtibos
    ABI

  21. Temperature Dependences of the Sputtering of Negative Silicon Cluster Ions

    Б.Г. Атабаев, R. Dzabbarganov, F. R. Yuzikaeva +3

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 iqtibos
    ABI

  22. The Effect of Atmospheric Oxide Thermodesorption on Negative-Ion Atomic and Cluster Sputtering of Silicon Single Crystal by Cesium Ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos
    ABI

  23. The effect of atmospheric oxide thermodesorption on negative-ion atomic and cluster sputtering of silicon single crystal by cesium ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    MaqolaOchiq kirishIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования20240 iqtibos
    ABI

  24. Microstructural and strain control in 14C-doped 3C-SiC/Si(100): Substrate resistivity, growth mode, and HRXRD–Raman defect analysis

    Б.Г. Атабаев, A. S. Chipura, M. V. Dolgopolov +9

    Maqola20260 iqtibos
    ABI