Dilmurad SAIDOV

3 ta ish

Urganch davlat universiteti

1. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

   Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 iqtibos

   ABIABI:AkademIndex/2026.other.390741

2. Influence of Defects on Low Temperature Diffusion of Boron in SiC

   I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 iqtibos

   ABIABI:AkademIndex/2026.other.390730

3. Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

   Kh. N. Juraev, M. U. Hajiev, А. Кутлимратов +2

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials Science20241 iqtibos

   ABIABI:AkademIndex/2024.article.002436