Nonequilibrium Diffusion of Boron in SiC at Low Temperatures
Iikham G. AtabaevPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;Tojiddin M. SalievPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;É. N. BakhranovPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;Dilmurad SAIDOVPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;Kh. N. JuraevPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;C. C. TinDepartment of Physics, Auburn University, Auburn, USA;Víctor AdedejiDepartment of Physics, Auburn University, Auburn, USA;Б.Г. АтабаевArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, UzbekistanNilufar G. SaidkhanovaArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, Uzbekistan
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Annotatsiya
Nonequilibrium diffusion of Boron in 3C SiC was performed using a flow of carbon vacancies. The temperature of diffusion was 1150-1250℃ and concentration of Boron in doped area reached about 1019 to 1020 cm-3. It is shown that after thermal annealing in vacuum the characteristics of fabricated structures are close to those of the structures made by the conventional technology.
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