A. S. Chipura

6 ta ish

Samara State Technical University

1. Negative Isotopic Shift of the LO Phonon in 3C-SiC: A Universal Mechanism of Mass Effect Dominance in Cubic Crystals

   M. V. Dolgopolov, A. S. Chipura

   Maqola20253 iqtibos

   ABIABI:AkademIndex/2026.other.868719

2. Scaling Models of Electrical Properties of Photo- and Beta-Converters with Nano-Heterojunctions

   M. V. Dolgopolov, Maksim Elisov, Sali A. Rajapov +1

   MaqolaAdvanced Energy Technologies and Civil Engineering InnovationsComputational nanotechnology20232 iqtibos

   ABIABI:AkademIndex/2023.article.001345

3. In Situ Mapping of Space Charge Region Activation Dynamics in SiC/Si-Based Heterostructures by KPFM/STS: Role of Interface State Recharging

   M. V. Dolgopolov, N. A. Ivliev, V. V. Radenko +3

   MaqolaSilicon Carbide Semiconductor TechnologiesPhysics of Particles and Nuclei Letters20262 iqtibos

   ABIABI:AkademIndex/2026.article.011837

4. Modeling of semiconductor heterostructures for energy converters and sensors

   M. V. Dolgopolov, Maksim Elisov, S. A. Radzhapov +2

   Maqola20242 iqtibos

   ABIABI:AkademIndex/2026.other.432354

5. Efficiency of Activated Nano-Heterojunctions on Silicon and Silicon Carbide Substrates

   M. V. Dolgopolov, Maksim Elisov, S. A. Radzhapov +2

   MaqolaSemiconductor Quantum Structures and DevicesComputational nanotechnology20230 iqtibos

   ABIABI:AkademIndex/2023.article.002480

6. Microstructural and strain control in 14C-doped 3C-SiC/Si(100): Substrate resistivity, growth mode, and HRXRD–Raman defect analysis

   Б.Г. Атабаев, A. S. Chipura, M. V. Dolgopolov +9

   Maqola20260 iqtibos

   ABIABI:AkademIndex/2026.article.038816