Microstructural and strain control in 14C-doped 3C-SiC/Si(100): Substrate resistivity, growth mode, and HRXRD–Raman defect analysis
Б.Г. АтабаевInstitute of Ion Plasma Laser TechnologiesA. S. ChipuraDepartment of Higher Mathematics, Samara State Technical University, Samara, Russian FederationM. V. DolgopolovDepartment of Higher Mathematics, Samara State Technical University, Samara, Russian FederationV. I. ChepurnovDepartment of Solid-State Physics and Nonequilibrium Systems, Samara University, Samara, Russian FederationХ. Б. АшуровLaboratory of Applied Nanotechnologies, U.A. Arifov Institute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, UzbekistanKh. N. JuraevDepartment of Physics and Chemistry, ”TIIAME” National Research University, Tashkent, UzbekistanS. A. RadzhapovLaboratory for High Energy Physics, S.A. Azimov Physical-Technical Institute, Uzbekistan Academy of Sciences, Tashkent, UzbekistanV. M. RotshteynCenter for Joint Use of Scientific Equipment, U.A. Arifov Institute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, UzbekistanIlyos Kh. KhudaykulovCenter for Joint Use of Scientific Equipment, U.A. Arifov Institute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, UzbekistanT. K. TurdalievInstitute of Ion Plasma Laser TechnologiesК.К. МедведеваInstitute of Ion Plasma Laser TechnologiesU. B. KhursandovInstitute of Ion Plasma Laser Technologies
2026en
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