V. V. Radenko

1 ta ish

Росатом

1. In Situ Mapping of Space Charge Region Activation Dynamics in SiC/Si-Based Heterostructures by KPFM/STS: Role of Interface State Recharging

   M. V. Dolgopolov, N. A. Ivliev, V. V. Radenko +3

   MaqolaSilicon Carbide Semiconductor TechnologiesPhysics of Particles and Nuclei Letters20262 iqtibos

   ABIABI:AkademIndex/2026.article.011837