E. V. Kalinina

5 ta ish

Russian Academy of Sciences

1. High-dose Al-implanted 4H-SiC p+-n-n+ junctions

   E. V. Kalinina, G. Kholujanov, В. Н. Соловьев +11

   Maqola20004 iqtibos

   ABIABI:AkademIndex/2026.other.534891

2. Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers

   E. V. Kalinina, G. Kholuyanov, D. V. Davydov +5

   Maqola20033 iqtibos

   ABIABI:AkademIndex/2026.other.382031

3. A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum

   E. V. Kalinina, V. Kossov, R. R. Yafaev +2

   Maqola20102 iqtibos

   ABIABI:AkademIndex/2026.other.498876

4. Structural, electrical, and optical properties of low-doped 4H–SiC chemical vapor deposited epitaxial layers

   E. V. Kalinina, G. Kholujanov, A. S. Zubrilov +13

   Maqola20012 iqtibos

   ABIABI:AkademIndex/2026.other.534895

5. Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions

   E. V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

   Maqola20042 iqtibos

   ABIABI:AkademIndex/2026.other.652946