V. V. Kozlovski

3 ta ish

Fizika-Texnika Instituti

1. Influence of proton irradiation on recombination current in 6H–SiC pn structures

   Anatoly M. Strel’chuk, V. V. Kozlovski, N.S. Savkina +2

   Maqola19993 iqtibos

   ABIABI:AkademIndex/2026.other.382032

2. Radiation-stimulated photoluminescence in electron irradiated 4H-SiC

   A. A. Lebedev, B. Ya. Ber, N. V. Seredova +2

   Maqola20152 iqtibos

   ABIABI:AkademIndex/2026.other.260890

3. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

   A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

   MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 iqtibos

   ABIABI:AkademIndex/2000.article.000005