Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC

Anatoly M. Strel’chukRussian Academy of SciencesN.S. SavkinaA.F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, RussiaAlexey N. KuznetsovPhysico-Technical InstituteA. A. LebedevRussian Academy of SciencesA. S. TregubovaA.F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, Russia

2002en

ABI

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Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1016/s0921-5107(01)01042-x

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