4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
Evgenia V. KalininaIoffe Physicotechnical Institute RASA. S. ZubrilovRussian Academy of SciencesВ. А. СоловьевIoffe Physicotechnical Institute RASN.I. KuznetsovIoffe Physicotechnical Institute RASAnders HallénKTH Royal Institute of TechnologyAndrey O. KonstantinovSusanne KarlssonS. RendakovaTechnology Dynamics (United States)V. Dmitriev
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