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AkademIndex

Xizmatlar

Anders Hallén

12 ta ish

KTH Royal Institute of Technology

AkademScholarda batafsil koʻrsatkichlar

  1. High-dose Al-implanted 4H-SiC p+-n-n+ junctions

    E. V. Kalinina, G. Kholujanov, В. Н. Соловьев +11

    Maqola20004 iqtibos
    ABI

  2. Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers

    E. V. Kalinina, G. Kholuyanov, D. V. Davydov +5

    Maqola20033 iqtibos
    ABI

  3. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

    Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesMaterials science forum20052 iqtibos
    ABI

  4. Structural, electrical, and optical properties of low-doped 4H–SiC chemical vapor deposited epitaxial layers

    E. V. Kalinina, G. Kholujanov, A. S. Zubrilov +13

    Maqola20012 iqtibos
    ABI

  5. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

    Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 iqtibos
    ABI

  6. Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions

    E. V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

    Maqola20042 iqtibos
    ABI

  7. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 iqtibos
    ABI

  8. High Energy Resolution Detectors Based on 4H-SiC

    Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5

    MaqolaParticle Detector Development and PerformanceMaterials science forum20051 iqtibos
    ABI

  9. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

    Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos
    ABI

  10. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  11. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 iqtibos
    ABI

  12. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 iqtibos
    ABI