Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
Evgenia V. KalininaIoffe Physicotechnical Institute RASG. KholuyanovIoffe Physicotechnical Institute RASA. А. СитниковаRussian Academy of SciencesV. KossovElectron OptronicR. R. YafaevElectron OptronicGerhard PenslFriedrich-Alexander-Universität Erlangen-NürnbergSergey A. ReshanovAndrey O. KonstantinovAnders HallénKTH Royal Institute of Technology
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