R. R. Yafaev

3 ta ish

Optronic (Sweden)

1. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

   Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 iqtibos

   ABIABI:AkademIndex/2026.other.603414

2. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

   Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 iqtibos

   ABIABI:AkademIndex/2003.article.000128

3. 4H-SiC High Temperature Spectrometers

   Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 iqtibos

   ABIABI:AkademIndex/2007.article.000197