Ushbu ishga iqtibos qilgan ishlar

1 ta ish

Ish: Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

1. 4H-SiC High Temperature Spectrometers

   Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 iqtibos

   ABIABI:AkademIndex/2007.article.000197