Gerhard Pensl

1 ta ish

Friedrich-Alexander-University Erlangen-Nürnberg

1. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

   Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 iqtibos

   ABIABI:AkademIndex/2003.article.000128