V. Dmitriev

6 ta ish

Technology Dynamics (United States)

1. High-dose Al-implanted 4H-SiC p+-n-n+ junctions

   E. V. Kalinina, G. Kholujanov, В. Н. Соловьев +11

   Maqola20004 iqtibos

   ABIABI:AkademIndex/2026.other.534891

2. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

   N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20002 iqtibos

   ABIABI:AkademIndex/2000.article.000164

3. Structural, electrical, and optical properties of low-doped 4H–SiC chemical vapor deposited epitaxial layers

   E. V. Kalinina, G. Kholujanov, A. S. Zubrilov +13

   Maqola20012 iqtibos

   ABIABI:AkademIndex/2026.other.534895

4. HVPE GaN and AIGaN 'Substrates' for Homoepitaxy

   Yu. Melnik, A. E. Nikolaev, С. И. Степанов +5

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

   ABIABI:AkademIndex/1998.article.000048

5. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

   Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/2000.article.000171

6. GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

   Michael E. Mastro, O. Kryliouk, Todd Dann +4

   MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum20020 iqtibos

   ABIABI:AkademIndex/2002.article.000216